PLCC44
Nonvolatile Program and Data Memories
– 8K Bytes of In-System Self-programmable Flash
Endurance: 10,000 Write/Erase Cycles
– Optional Boot Code Section with Independent Lock bits
In-System Programming by On-chip Boot Program
True Read-While-Write Operation
– 512 Bytes EEPROM
Endurance: 100,000 Write/Erase Cycles
– 512 Bytes Internal SRAM
– Up to 64K Bytes Optional External Memory Space
– Programming Lock for Software Security
| Global Part Number | PVM4A503D01R00 |
| Previous Part Number |
|
| Power Rating
| 0.25W(70?)
|
| Maximum Working Voltage
| 200Vdc
|
| Resistance Taper
| B (Linear)
|
| Contact Resistance Variation
| 3% max. of nominal total resistance value
|
| Residual Resistance
| 1% max. of nominal total resistance value
|
| Adjustment Direction
| Top
|
| Soldering Method
| Flow/Reflow/Soldering Iron
|
| Size
| 4mm
|
| Auto Adjustment
| Yes
|
| Number of Turns (Effective Rotation Angle)
| 1(240?±10?)
|
| Torque
| 1.0 to 14.7mN?m
|
| Total Resistance Value
| 50k ohm ±20%
|
| TCR
| ±150ppm/?
|
| Operating Temperature
| -55 to +125?
|
| Mass
| 0.08g |